IQEH50NE2LM7ZCGATMA1 vs IAUCN08S7L024ATMA1 비교
다음의 상세 나란히 비교: IQEH50NE2LM7ZCGATMA1 제조: Infineon 및 IAUCN08S7L024ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 활성사양 비교
| 파라미터 | IQEH50NE2LM7ZCGATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.42 | $1.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| 동작 온도 범위 | -55 degrees C to +175 degrees C | -55C to +175C (Tj) |
| 패키지 | PG-TTFN-9-3 | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS™ 7 N-channel trench MOSFET |
| RoHS 상태 | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | — | 150 A |
| On-Resistance RDS(on) max | — | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 레벨 | — | MSL1 (per JEDEC J-STD-020) |