IR2011SPBF vs 2ED21834S06JXUMA1 对比

详细并排对比 IR2011SPBF 出自 Infineon 和 2ED21834S06JXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 量产中

规格对比

参数 IR2011SPBF 2ED21834S06JXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.89
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High-Side and Low-Side, Inverting Half-bridge (high-side + low-side)
输出数量 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) —
工作温度范围 -40 C to +125 C -40 °C to +125 °C
封装 8-SOIC (DSO-8) PG-DSO-14-49 (DSO-14)
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
引脚数 — 14
RoHS 状态 — Compliant
Standard Reel Quantity — 3000

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