IR2011SPBF vs 2ED21834S06JXUMA1 Comparison

Detailed side-by-side comparison of IR2011SPBF by Infineon and 2ED21834S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED21834S06JXUMA1

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 βœ“ Active

Specification Comparison

Parameter IR2011SPBF 2ED21834S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.89
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High-Side and Low-Side, Inverting Half-bridge (high-side + low-side)
Number of Outputs 2 β€”
Offset Voltage (High-Side, max) 200 V β€”
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V β€”
Output Source/Sink Current 1 A / 1 A (typ) β€”
Propagation Delay (typ) 80 ns β€”
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] β€”
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V β€”
dV/dt Immunity Yes β€”
Negative Transient Tolerance Yes (on VS pin) β€”
Operating Temperature Range -40 C to +125 C -40 Β°C to +125 Β°C
Package 8-SOIC (DSO-8) PG-DSO-14-49 (DSO-14)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) β€”
Tube / Reel Packaging Tube (per Infineon PBF convention) β€”
Maximum Offset Voltage (VBS) β€” 650 V
Typical Sink Current β€” 2.5 A
Typical Source Current β€” 2.5 A
Input Logic β€” Non-Inverting
Integrated Bootstrap Diode β€” Yes
Technology β€” SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) β€” Yes (VCC and VBS)
Number of Pins β€” 14
RoHS Status β€” Compliant
Standard Reel Quantity β€” 3000

Datasheets & Resources

Browse All Products Create BOM Request Quote