IR2117STRPBF vs IRS21834STRPBF 对比

详细并排对比 IR2117STRPBF 出自 Infineon 和 IRS21834STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 量产中

规格对比

参数 IR2117STRPBF IRS21834STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.58 $1.45
Configuration High-Side Single Channel Half-Bridge
功能 Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
输出数量 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
上升时间 80 ns (typ) —
下降时间 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes —
Negative Transient Voltage Tolerance Yes, dV/dt immune dV/dt immune
工作温度范围 -40 C to +125 C -40C to +125C
封装 / 外壳 8-SOIC (0.154 inch / 3.90 mm width) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 MSL3 (per JEDEC J-STD-020) 1 (unlimited)
Number of Drivers — 2 (high-side + low-side)
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Source Current (typ.) — 1.9 A
Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 200 ns
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
封装 — 14-SOIC (SOIC-14)

数据手册与资源

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