IR21531STRPBF vs IRS2153DSTRPBF 对比

详细并排对比 IR21531STRPBF 出自 Infineon 和 IRS2153DSTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR21531STRPBF IRS2153DSTRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.70 $0.42
Configuration Half-Bridge —
Driver Type High-side and Low-side, self-oscillating —
输出数量 2 (high-side, low-side) —
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
上升时间 80 ns —
下降时间 45 ns —
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) —
工作温度 -40C to +125C —
封装 8-pin SOIC (SO-8) 8-pin SOIC
安装类型 Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
RoHS 状态 Compliant (ROHS3) Compliant
拓扑 — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
工作温度范围 — -40C to +125C
Technology — HVIC + latch-immune CMOS
Lead-Free — Yes

数据手册与资源

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