IRF2907ZSTRLPBF vs IRF540NSTRLPBF 对比

详细并排对比 IRF2907ZSTRLPBF 出自 Infineon 和 IRF540NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF ✓ 量产中

规格对比

参数 IRF2907ZSTRLPBF IRF540NSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.74
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
连续漏极电流(TC=25°C) 170 A —
连续漏极电流(TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
工作结温 -55 C to +175 C —
Technology IR HEXFET / IR MOSFET HEXFET (IR MOSFET)
封装 D2PAK (TO-263AB) surface mount D2PAK (TO-263), surface mount
引脚数量 3 (Gate, Drain, Source) —
安装类型 Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) Tape & Reel (13-inch reel)
Lead-Free Yes (PBF suffix) —
RoHS 状态 Compliant Compliant (Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 33 A
Pulsed Drain Current (Idm) — 110 A (per datasheet pulse curve)
On-Resistance Rds(on) max at Vgs=10V — 44 mOhm
Gate Threshold Voltage Vgs(th) — 2.0 V to 4.0 V
Total Gate Charge Qg — 47.3 nC (typical)
Power Dissipation (Pd) at Tc=25C — 130 W
工作温度范围 — -55 C to +175 C
Avalanche Energy Rated — Yes (HEXFET ruggedized)

数据手册与资源

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