IRF2907ZSTRLPBF vs IRF540NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRF2907ZSTRLPBF von Infineon und IRF540NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF2907ZSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,74 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 170 A | — |
| Kontinuierlicher Drain-Strom (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | HEXFET (IR MOSFET) |
| Gehäuse | D2PAK (TO-263AB) surface mount | D2PAK (TO-263), surface mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Montageart | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | Tape & Reel (13-inch reel) |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | Compliant (Pb-free) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |