IRF2907ZSTRLPBF vs IRFR4615TRLPBF 对比

详细并排对比 IRF2907ZSTRLPBF 出自 Infineon 和 IRFR4615TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 量产中

规格对比

参数 IRF2907ZSTRLPBF IRFR4615TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.39
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
连续漏极电流(TC=25°C) 170 A —
连续漏极电流(TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
工作结温 -55 C to +175 C —
Technology IR HEXFET / IR MOSFET IR MOSFET (N-Channel Enhancement Mode)
封装 D2PAK (TO-263AB) surface mount TO-252AA (DPAK)
引脚数量 3 (Gate, Drain, Source) —
安装类型 Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
RoHS 状态 Compliant —
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
工作温度范围 — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
单脉冲雪崩能量 — 109 mJ

数据手册与资源

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