IRF2907ZSTRLPBF vs IRFR4615TRLPBF Comparación
Comparación detallada lado a lado de IRF2907ZSTRLPBF por Infineon y IRFR4615TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF2907ZSTRLPBF | IRFR4615TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $0,39 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Corriente de drenador continua (TC=25°C) | 170 A | — |
| Corriente de drenador continua (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | IR MOSFET (N-Channel Enhancement Mode) |
| Encapsulado | D2PAK (TO-263AB) surface mount | TO-252AA (DPAK) |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Tipo de montaje | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Estado RoHS | Compliant | — |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Energía de avalancha de pulso único | — | 109 mJ |