IRF4905SPBF vs IPB120P04P4L03ATMA2 对比

详细并排对比 IRF4905SPBF 出自 Infineon 和 IPB120P04P4L03ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 ✓ 量产中

规格对比

参数 IRF4905SPBF IPB120P04P4L03ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $1.74
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V 40 V
Continuous Drain Current (ID, Tc=25C) -42 A 120 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V [DATA_NEEDED: VGS(th) typ/range]
Power Dissipation (PD, Tc=25C) 170 W 136 W
工作结温 -55 C to +150 C -55C to +175C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
封装 D2PAK (TO-263) surface mount PG-TO263-3-2 (D2PAK)
安装类型 Surface Mount Surface Mount
Technology HEXFET, planar cell —
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 状态 Compliant (PBF suffix indicates Pb-free) Compliant (per Infineon product page)
Qualification JEDEC standard —
Transistor Polarity — P-Channel
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
引脚数量 — 3 (Gate, Drain, Source)
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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