IRF7205TRPBF vs IRF7205PBF 对比

详细并排对比 IRF7205TRPBF 出自 Infineon 和 IRF7205PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7205TRPBF IRF7205PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.18 $0.47
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) IR MOSFET (HEXFET, planar cell)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V -1 V to -3 V (typical)
Total Gate Charge Qg 27 nC —
功耗(TC=25°C) 2.5 W —
工作结温 -55 °C to +150 °C —
封装 SO-8 (8-SO) SO-8
安装类型 Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -4.6 A
On-Resistance RDS(on) max at VGS=-10V — 70 mOhm
On-Resistance RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
工作温度范围 — -55 C to +150 C (junction)
Power Dissipation (TA=25C) — [DATA_NEEDED: Pd at TA=25C]
Switching Frequency Optimization — Below 100 kHz
Qualification — JEDEC standard
RoHS 状态 — Compliant (Pb-free per PBF suffix)
Generation — Fourth Generation HEXFET

数据手册与资源

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