IRFR220NTRPBF vs IRFR220NPBF 对比
详细并排对比 IRFR220NTRPBF 出自 Infineon 和 IRFR220NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR220NTRPBF | IRFR220NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.74 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar) |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | — |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | [DATA_NEEDED: total gate charge] |
| Maximum Power Dissition (PD) at TC=25°C | 43 W | — |
| 工作结温 | -55°C to +150°C | — |
| 封装 | TO-252AA (DPAK), surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited floor life per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant (PBF suffix) | — |
| Avalanche Energy Rated | Yes (fully characterized) | Yes (per datasheet characterization) |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | — |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| 封装 / 外壳 | — | TO-252AA (DPAK) |
| 工作温度范围 | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| 引脚数量 | — | 3 (Gate, Drain, Source) plus tab |