IRFR220NTRPBF vs IRFR220NPBF 비교
다음의 상세 나란히 비교: IRFR220NTRPBF 제조: Infineon 및 IRFR220NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR220NTRPBF | IRFR220NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.22 | $0.74 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar) |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | — |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | [DATA_NEEDED: total gate charge] |
| Maximum Power Dissition (PD) at TC=25°C | 43 W | — |
| 동작 접합 온도 | -55°C to +150°C | — |
| 패키지 | TO-252AA (DPAK), surface mount | — |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (unlimited floor life per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant (PBF suffix) | — |
| Avalanche Energy Rated | Yes (fully characterized) | Yes (per datasheet characterization) |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | — |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| 패키지 / 케이스 | — | TO-252AA (DPAK) |
| 동작 온도 범위 | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| 핀 수 | — | 3 (Gate, Drain, Source) plus tab |