IRS2153DSTRPBF vs IRS2153DSPBF 对比

详细并排对比 IRS2153DSTRPBF 出自 Infineon 和 IRS2153DSPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS2153DSTRPBF IRS2153DSPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.98
拓扑 Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
封装 8-pin SOIC 8-SOIC (SOIC-8)
安装类型 Surface Mount Surface Mount
工作温度范围 -40C to +125C —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
RoHS 状态 Compliant —
Lead-Free Yes —
功能 — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
输出数量 — 2 (HO, LO)
Maximum Offset Voltage (Voffset) — 600 V
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
工作温度 — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)

数据手册与资源

浏览全部产品 创建 BOM 获取报价