IRS2153DSTRPBF vs IRS2153DSPBF 비교
다음의 상세 나란히 비교: IRS2153DSTRPBF 제조: Infineon 및 IRS2153DSPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRS2153DSTRPBF | IRS2153DSPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.42 | $0.98 |
| 토폴로지 | Half-Bridge Gate Driver with internal oscillator | — |
| High-Side Floating Supply Absolute Max | 600 V | — |
| VDD Supply Voltage Range | 10 V to 20 V | — |
| Output Source Current (typ.) | 0.18 A | — |
| Output Sink Current (typ.) | 0.26 A | — |
| Internal Propagation Delay (typ.) | 1.1 us | — |
| Integrated Bootstrap FET | Yes | — |
| Oscillator Type | RC-based, similar to CMOS 555 timer | — |
| Programmable Shutdown Pin | Yes | — |
| 패키지 | 8-pin SOIC | 8-SOIC (SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -40C to +125C | — |
| Technology | HVIC + latch-immune CMOS | HVIC + latch-immune CMOS |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| 기능 | — | Half-bridge gate driver with RC input oscillator |
| Configuration | — | High-side + low-side driver, half-bridge |
| 출력 수 | — | 2 (HO, LO) |
| Maximum Offset Voltage (Voffset) | — | 600 V |
| VCC Supply Voltage | — | 10 V to 20 V |
| VBS High-side Supply Voltage | — | VCC + 0.3 V (typical bootstrap) |
| Gate Drive Source Current (IO+) | — | 130 mA typical |
| Gate Drive Sink Current (IO-) | — | 270 mA typical |
| Rise Time (tr) | — | [DATA_NEEDED: tr] (typical ~100 ns) |
| Fall Time (tf) | — | [DATA_NEEDED: tf] (typical ~50 ns) |
| Internal Deadtime | — | ~1.2 us |
| 동작 온도 | — | -40 C to +125 C |
| Input Type | — | RC-input oscillator (no external PWM required) |
| Logic Polarity | — | Inverting / Non-inverting per channel |
| Undervoltage Lockout | — | Yes (VCC) |