K3K8K80BM-JGCT vs K3LK8K80CM-MFCP 对比
详细并排对比 K3K8K80BM-JGCT 出自 Samsung Electronics 和 K3LK8K80CM-MFCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 量产中
规格对比
| 参数 | K3K8K80BM-JGCT | K3LK8K80CM-MFCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 存储器类型 | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 48 Gbit (6 GB) |
| 存储组织 | [DATA_NEEDED: x8/x16 organization] | [DATA_NEEDED: organization (x width)] |
| 接口 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | 315 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40 C to +105 C (automotive-grade) |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | unknown |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| 封装 | — | 315-ball FBGA (MFCP) |
| 电源电压 | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |