K3K8K80BM-JGCT vs K3LK8K80CM-MFCP 비교
다음의 상세 나란히 비교: K3K8K80BM-JGCT 제조: Samsung Electronics 및 K3LK8K80CM-MFCP 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 활성
사양 비교
| 파라미터 | K3K8K80BM-JGCT | K3LK8K80CM-MFCP |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.10 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 메모리 유형 | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 48 Gbit (6 GB) |
| 메모리 구성 | [DATA_NEEDED: x8/x16 organization] | [DATA_NEEDED: organization (x width)] |
| 인터페이스 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | 315 |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | -40 C to +105 C (automotive-grade) |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance] | unknown |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | — |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| 패키지 | — | 315-ball FBGA (MFCP) |
| 공급 전압 | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |