K3K8K80BM-JGCT vs K3LK8K80CM-MFCP Vergleich
Detaillierter Direktvergleich von K3K8K80BM-JGCT von Samsung Electronics und K3LK8K80CM-MFCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3K8K80BM-JGCT | K3LK8K80CM-MFCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,10 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| Speichertyp | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 48 Gbit (6 GB) |
| Speicherorganisation | [DATA_NEEDED: x8/x16 organization] | [DATA_NEEDED: organization (x width)] |
| Schnittstelle | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | 315 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40 C to +105 C (automotive-grade) |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Gehäuse | — | 315-ball FBGA (MFCP) |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |