K3K8K80BM-MGCP vs K3LK8K80CM-MFCP 对比

详细并排对比 K3K8K80BM-MGCP 出自 Samsung Electronics 和 K3LK8K80CM-MFCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3K8K80BM-MGCP K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung

K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung

K3K8K80BM-MGCP ✓ 量产中
Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ 量产中

规格对比

参数 K3K8K80BM-MGCP K3LK8K80CM-MFCP
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 LPDDR5 SDRAM (DRAM) LPDDR5 SDRAM
Density 64 Gb 48 Gbit (6 GB)
存储组织 2G x 32 [DATA_NEEDED: organization (x width)]
数据速率 6400 Mbps —
接口 LPDDR5 (CMOS) LPDDR5 (JESD209-5 class low-power DRAM interface)
封装 FBGA-315 (PBGA315) 315-ball FBGA (MFCP)
Supply Voltages 500 mV, 900 mV, 1.05 V, 1.8 V —
工作温度 -25C to +85C -40 C to +105 C (automotive-grade)
安装类型 Surface Mount Surface Mount
Technology CMOS —
Memory Category Volatile DRAM —
RoHS 状态 Compliant unknown
Lead Free Yes —
Application Class Specialized ICs / Memory —
I/O Width 32-bit —
Pin Speed — 6400 Mbps
Data Rate (package) — 51.2 GB/s (family max)
Ball Count — 315
电源电压 — [DATA_NEEDED: VDD/VDDQ voltage]
Power Saving vs LPDDR4X — Approximately 20%
Generation — LPDDR5 (5th generation low-power DRAM)
Application Grade — Automotive-grade storage chip
Place of Origin — Johor, Malaysia

数据手册与资源

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