K4A4G085WD-BCRC vs K4A4G085WF-BITD 对比
详细并排对比 K4A4G085WD-BCRC 出自 Samsung Electronics 和 K4A4G085WF-BITD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WD-BCRC | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.58 | $2.65 |
| Memory Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 存储器类型 | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| 数据速率 | 2400 Mb/s (PC2400) | — |
| 电源电压 | 1.2 V | — |
| 封装 | FBGA-78 (TFBGA) | 78-ball FBGA (78FBGA) |
| Number of Terminals | 78 | — |
| 接口 | Parallel | Parallel, DDR4 SSTL12 |
| Access Mode | Multi-bank page burst | — |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | CL19 (typical at 2666 Mbps) |
| 工作温度范围 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | — |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gbit |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| 工作温度 | — | -40C to +95C |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |