K4A4G085WF-BITD vs K4A4G085WD-BCRC 对比
详细并排对比 K4A4G085WF-BITD 出自 Samsung Electronics 和 K4A4G085WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WF-BITD | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.65 | $3.58 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作温度 | -40C to +95C | — |
| 封装 | 78-ball FBGA (78FBGA) | FBGA-78 (TFBGA) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| CAS 延迟 | CL19 (typical at 2666 Mbps) | [DATA_NEEDED: CAS Latency] |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 接口 | Parallel, DDR4 SSTL12 | Parallel |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Memory Density | — | 4 Gbit |
| 数据速率 | — | 2400 Mb/s (PC2400) |
| 电源电压 | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| 工作温度范围 | — | [DATA_NEEDED: Operating Temperature Range] |
| RoHS 状态 | — | [DATA_NEEDED: RoHS Status] |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |