K4A4G085WF-BITD vs K4A4G085WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WF-BITD by Samsung Electronics and K4A4G085WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WF-BITD | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $3.58 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Operating Temperature | -40C to +95C | — |
| Package | 78-ball FBGA (78FBGA) | FBGA-78 (TFBGA) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| CAS Latency | CL19 (typical at 2666 Mbps) | [DATA_NEEDED: CAS Latency] |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Interface | Parallel, DDR4 SSTL12 | Parallel |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Memory Density | — | 4 Gbit |
| Data Rate | — | 2400 Mb/s (PC2400) |
| Supply Voltage | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Operating Temperature Range | — | [DATA_NEEDED: Operating Temperature Range] |
| RoHS Status | — | [DATA_NEEDED: RoHS Status] |
| MSL Level | — | [DATA_NEEDED: MSL Level] |