K4A4G085WG-BCWE vs MT40A512M8RH-075E:B 对比
详细并排对比 K4A4G085WG-BCWE 出自 Samsung Electronics 和 MT40A512M8RH-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WG-BCWE | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.68 | $2.15 |
| 存储器类型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| 数据速率 | 3200 Mbps/pin | 2666 MT/s (DDR4-2666) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| 封装 | FBGA-78 (BCW) | 78-FBGA (9 x 10.5 mm), TFBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh | [DATA_NEEDED: refresh rate specification] | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| 存储组织 | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 接口类型 | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| 基准电压 | — | On-die internal adjustable VREFDQ generation |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |