K4A8G085WB-BICR vs MT40A1G8SA-062E 对比
详细并排对比 K4A8G085WB-BICR 出自 Samsung Electronics 和 MT40A1G8SA-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中规格对比
| 参数 | K4A8G085WB-BICR | MT40A1G8SA-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.25 | $6.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| 存储组织 | 1G x 8 | 1G x 8 |
| 数据速率 | 2400 Mbps | 3200 MT/s (DDR4-3200) |
| 电源电压 | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| 封装 | 78-ball FBGA | 78-ball FBGA (7.5 x 11 mm) |
| 引脚数量 | 78 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| 工作温度范围 | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| 工作温度 | — | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Burst Length | — | BL8, BC4 (burst chop) |
| 特性 | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |