K4A8G085WB-BIWE vs K4A8G085WB-BCPB 对比
详细并排对比 K4A8G085WB-BIWE 出自 Samsung Electronics 和 K4A8G085WB-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BIWE | K4A8G085WB-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $13.78 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 3200 Mbps | 3200 Mbps (PC4-25600) |
| 电源电压 | 1.2 V | 1.2 V (nominal) |
| 工作温度 | 0°C to +85°C | — |
| 封装 | 78-FBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS 延迟 | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Density | — | 8 Gbit |
| 存储组织 | — | 1G x 8 |
| Speed Grade | — | BC |
| CAS Latency (CL) | — | 22 |
| Burst Length | — | 8 |
| Bank Architecture | — | 16 banks (4 bank groups) |
| Refresh Interval | — | 7.8 us (up to 85C) |
| 接口类型 | — | SSTL-12 |
| Termination | — | ODT / dynamic ODT |
| Self-Refresh | — | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | — | 11 mm x 11 mm |
| Operating Mode | — | DLL enabled |