K4A8G085WB-BIWE vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIWE | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $4.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0C to +85C |
| Package | 78-FBGA | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Interface | — | DDR4 SDRAM parallel interface |
| Operating Temperature Grade | — | Commercial (0C to 85C) |