K4A8G085WB-BIWE vs K4A8G085WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β Active
Specification Comparison
| Parameter | K4A8G085WB-BIWE | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $3.28 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | β |
| Memory Organization | 1G x 8 | β |
| Data Rate | 3200 Mbps | 3200 Mbps (PC4-25600) |
| Supply Voltage | 1.2 V | 1.2 V (nominal) |
| Operating Temperature | 0Β°C to +85Β°C | β |
| Package | 78-FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Memory Interface | Parallel | β |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | β |
| CAS Latency | [DATA_NEEDED: CL value] | β |
| Refresh | Auto-refresh, self-refresh | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Density | β | 8 Gbit |
| Organization | β | 1G x 8 |
| Speed Grade | β | BC |
| CAS Latency (CL) | β | 22 |
| Burst Length | β | 8 |
| Bank Architecture | β | 16 banks (4 bank groups) |
| Refresh Interval | β | 7.8 us (up to 85C) |
| Interface Type | β | SSTL-12 |
| Termination | β | ODT / dynamic ODT |
| Self-Refresh | β | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | β | 11 mm x 11 mm |
| Operating Mode | β | DLL enabled |