K4A8G085WB-BIWE vs K4A8G085WB-BICR 对比
详细并排对比 K4A8G085WB-BIWE 出自 Samsung Electronics 和 K4A8G085WB-BICR 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中规格对比
| 参数 | K4A8G085WB-BIWE | K4A8G085WB-BICR |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $4.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 3200 Mbps | 2400 Mbps |
| 电源电压 | 1.2 V | 1.2 V (VDD/VDDQ) |
| 工作温度 | 0°C to +85°C | — |
| 封装 | 78-FBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS 延迟 | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| Number of Banks | — | 16 |
| Refresh Cycles | — | 8192 |
| 引脚数量 | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| 工作温度范围 | — | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |