K4A8G085WC-BIWE vs H5AN8G6NDJR-XNC 对比
详细并排对比 K4A8G085WC-BIWE 出自 Samsung Electronics 和 H5AN8G6NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BIWE | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.29 | $55.68 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (max 1.26 V) |
| Supply Voltage (VDDQ) | 1.2 V | — |
| 工作温度范围 | -40°C to +95°C | — |
| 封装 | 78-FBGA | FBGA-96 (13x7.5 mm) |
| 安装类型 | Surface Mount | — |
| 接口 | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS 延迟 | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| 无卤 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |