K4A8G165WB-BCPB vs IS43TR16256AL-125KBL 对比

详细并排对比 K4A8G165WB-BCPB 出自 Samsung Electronics 和 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ 量产中

规格对比

参数 K4A8G165WB-BCPB IS43TR16256AL-125KBL
品牌 Samsung Electronics ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.30 $5.60
Density 8 Gb —
存储组织 512M x 16 —
Speed Grade 2133 Mbps (PC4-17000) —
电源电压 1.2 V (1.14 V to 1.26 V) 1.35V (backward compatible to 1.5V)
工作温度 0°C to 85°C 0°C ~ 95°C
封装 96-ball FBGA (TFBGA-96) 96-TWBGA (9x13mm)
Burst Length 8 (BL8) —
Burst Type Sequential and Interleave —
CAS 延迟 Programmable (e.g., 15, 16, 18) —
Refresh Auto and Self Refresh —
Number of Terminals 96 96
Package Code TFBGA —
Package Shape RECTANGULAR —
Terminal Position BOTTOM —
RoHS 状态 Compliant Compliant
存储器类型 — SDRAM - DDR3L
存储容量 — 4Gbit (256M x 16)
接口 — Parallel
Clock Frequency — 800 MHz
Access Time — 20 ns
安装类型 — Surface Mount
Memory Format — DRAM
Technology — SDRAM - DDR3L
数据速率 — 1600 Mbps
Lead-Free — Yes

数据手册与资源

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