K4A8G165WB-BCPB vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | SDRAM - DDR3L |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2133 Mbps | 1600 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature | 0C to +85C | 0°C ~ 95°C |
| Package | 96FBGA (TFBGA) | 96-TWBGA (9x13mm) |
| Number of Terminals | 96 | 96 |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS Status | Compliant (per Lisleapex listing) | Compliant |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Supply Voltage | — | 1.35V (backward compatible to 1.5V) |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Lead-Free | — | Yes |