K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 对比
详细并排对比 K4A8G165WB-BCPB 出自 Samsung Electronics 和 NT5CC256M16CP-DIB1 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $6.00 |
| Density | 8 Gb | 4Gb |
| 存储组织 | 512M x 16 | 256M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | 1.35V |
| 工作温度 | 0°C to 85°C | 0C to +95C (Tcase) |
| 封装 | 96-ball FBGA (TFBGA-96) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Burst Length | 8 (BL8) | 8 (BL8) and 4 (BC4) |
| Burst Type | Sequential and Interleave | — |
| CAS 延迟 | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS 状态 | Compliant | — |
| 存储器类型 | — | DDR3L SDRAM |
| 数据速率 | — | 1600Mbps (DDR3L-1600) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| RoHS | — | Compliant |
| 无卤 | — | Yes |
| Lead Free | — | Yes |