K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and NT5CC256M16CP-DIB1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps | 1600Mbps (DDR3L-1600) |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature | 0C to +85C | 0C to +95C (Tcase) |
| Package | 96FBGA (TFBGA) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Mounting Type | Surface Mount | — |
| Interface | DDR4 (synchronous, double data rate) | — |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS Status | Compliant (per Lisleapex listing) | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Supply Voltage | — | 1.35V |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11 |
| Write Latency (CWL) | — | 8 |
| tRCD/tRP | — | 11 |
| Burst Length | — | 8 (BL8) and 4 (BC4) |
| RoHS | — | Compliant |
| Halogen Free | — | Yes |
| Lead Free | — | Yes |