K4A8G165WB-BCPB vs NT5CC256M16CP-DIB1 Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and NT5CC256M16CP-DIB1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β ActiveNanya Technology
NT5CC256M16CP-DIB1
NT5CC256M16CP-DIB1 - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DIB1 β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | NT5CC256M16CP-DIB1 |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $6.00 |
| Density | 8 Gb | 4Gb |
| Organization | 512M x 16 | 256M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | β |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.35V |
| Operating Temperature | 0Β°C to 85Β°C | 0C to +95C (Tcase) |
| Package | 96-ball FBGA (TFBGA-96) | TFBGA-96, 9x13mm, 0.8mm pitch |
| Burst Length | 8 (BL8) | 8 (BL8) and 4 (BC4) |
| Burst Type | Sequential and Interleave | β |
| CAS Latency | Programmable (e.g., 15, 16, 18) | β |
| Refresh | Auto and Self Refresh | β |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Package Shape | RECTANGULAR | β |
| Terminal Position | BOTTOM | β |
| RoHS Status | Compliant | β |
| Memory Type | β | DDR3L SDRAM |
| Data Rate | β | 1600Mbps (DDR3L-1600) |
| Number of Banks | β | 8 |
| CAS Latency (CL) | β | 11 |
| Write Latency (CWL) | β | 8 |
| tRCD/tRP | β | 11 |
| RoHS | β | Compliant |
| Halogen Free | β | Yes |
| Lead Free | β | Yes |