K4A8G165WC-BCWE vs AS4C512M16D4A-62BCNTR 对比
详细并排对比 K4A8G165WC-BCWE 出自 Samsung Electronics 和 AS4C512M16D4A-62BCNTR 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ 量产中规格对比
| 参数 | K4A8G165WC-BCWE | AS4C512M16D4A-62BCNTR |
|---|---|---|
| 品牌 | Samsung Electronics | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $38.00 | $8.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作温度范围 | 0°C to +95°C | — |
| 封装 | 96-FBGA | 96-FBGA (7.5x13 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | 18 ns |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| 接口 | Differential (CK, /CK) | POD (Pseudo Open Drain) |
| RoHS 状态 | Compliant | — |
| JEDEC Standard | JEDEC DDR4 | — |
| 存储容量 | — | 8 Gbit (512M x 16) |
| 电源电压 | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | — | 1600 MHz (DDR4-3200) |
| 工作温度 | — | 0°C to +95°C (Commercial) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Write Cycle Time - Word, Page | — | 15 ns |
| Standard Pack | — | 1500/reel (Tape & Reel) |