K4B4G1646D-BYK0 vs MT41K256M16HA-125 对比
详细并排对比 K4B4G1646D-BYK0 出自 Samsung Electronics 和 MT41K256M16HA-125 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BYK0 | MT41K256M16HA-125 |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.90 | $6.36 |
| 存储器类型 | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | — |
| 电源电压 | 1.35 V (1.5 V compatible) | 1.35 V |
| 数据速率 | 1600 Mbps (PC3-12800) | — |
| 封装 | 96-ball FBGA | 96-FBGA (9x14 mm) |
| 工作温度 | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | Programmable (e.g., 11, 10, 9) | 11 |
| Burst Length | 8 (with burst chop 4) | — |
| On-Die Termination | Yes | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| 引脚数 | 96 | 96 |
| Die Revision | D-die | — |
| 存储容量 | — | 4Gbit (256M x 16) |
| 数据总线宽度 | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |