K4B4G1646E-BYMATCV vs H5TC4G63AFR-PBA 对比
详细并排对比 K4B4G1646E-BYMATCV 出自 Samsung Electronics 和 H5TC4G63AFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BYMATCV | H5TC4G63AFR-PBA |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.90 | $3.98 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit (256M x 16) | — |
| 数据速率 | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| 电源电压 | 1.35 V | — |
| I/O Voltage (VDDQ) | 1.35 V | — |
| 封装 | 96-ball FBGA | 96-ball FBGA |
| 引脚数 | 96 | — |
| 工作温度范围 | -40°C to +95°C | 0°C to +95°C (Tcase) |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| CAS 延迟 | Programmable (e.g., 13, 12, 11) | — |
| On-Die Termination (ODT) | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS 状态 | Compliant | — |
| Density | — | 4Gb |
| 存储组织 | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| 接口 | — | 16-bit I/O |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |