K4B4G1646E-BYMATCV vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV β Active
Specification Comparison
| Parameter | K4B4G1646E-BYMATCV | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | β |
| Data Rate | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Supply Voltage | 1.35 V | β |
| I/O Voltage (VDDQ) | 1.35 V | β |
| Package | 96-ball FBGA | 96-ball FBGA |
| Number of Pins | 96 | β |
| Operating Temperature Range | -40Β°C to +95Β°C | 0Β°C to +95Β°C (Tcase) |
| Number of Banks | 8 | 8 |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| CAS Latency | Programmable (e.g., 13, 12, 11) | β |
| On-Die Termination (ODT) | Yes | Yes |
| Auto Precharge | Yes | β |
| Self-Refresh | Yes | β |
| RoHS Status | Compliant | β |
| Density | β | 4Gb |
| Organization | β | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| CAS Latency (CL) | β | 11, 12, 13 |
| Interface | β | 16-bit I/O |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |
| RoHS | β | Compliant |