K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
料号： K4S561633F-ZL75 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.2 | $42.00 |
| 100 | $3.55 | $355.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.75 | $2,750.00 |
| 3,000 | $2.5 | $7,500.00 |
K4S561633F-ZL75 概述
A Synchronous DRAM (SDRAM) is a type of volatile dynamic random-access memory that synchronizes all read/write operations to a free-running system clock, enabling pipelined multi-bank operation. SDRAM occupies the position: DRAM -> volatile memory -> semiconductor memory. By dividing the storage array into four independently addressable banks, SDRAM overlaps precharge/activate phases of one bank with read/write accesses on another, doubling sustained throughput compared with Fast-Page Mode DRAM at the same clock rate.
Key features of this part include four-bank operation, programmable CAS latency (2 or 3), programmable burst length and burst type via the Mode Register Set (MRS) cycle, automatic precharge, and self-refresh. The interface is LVCMOS-compatible with multiplexed address and uses a 3.3V single supply, simplifying integration into mobile platforms where low voltage and compact packaging are critical. Samsung's CMOS fabrication delivers the speed-grade 7.5 ns (133 MHz) operation while keeping active current modest.
Typical applications include 3G/feature-phone baseband working memory, mobile handset main memory, PDA memory expansion, portable media player DRAM buffers, and other compact consumer/embedded designs that need 32 MB of 16-bit-wide RAM on a low-pin-count footprint. The 54-ball FBGA package is well suited to high-density mobile layouts where board height and routing escape are constrained.
When designing with this device, follow the JEDEC SDRAM initialization sequence (precharge-all, eight auto-refresh cycles, then MRS load) and place the 0.1 uF VDD/VSSQ decoupling caps as close to the balls as possible. Confirm the ZL75 (7.5 ns / 133 MHz) speed grade matches the controller's clock and CAS latency; the part is not pin-compatible with the faster 166 MHz -Z1L75 / -ZL1H variants or with the older 1Mx16 organization.
直接替换替代料： K4S561633F-ZL75 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4S561633F-ZL75 （相同外形与封装尺寸） ——差异在于 Burst Length, Memory Type, Organization, Package.
快速对比工具——选择替代料号进行并排对比：
K4S561633F-ZL750
✅ 直接替换📋 参考替代料（不在目录中）
K4S561633F-ZL1H
✅ 直接替换📋 参考替代料（不在目录中）
K4S561633F-ZF75
✅ 直接替换📋 参考替代料（不在目录中）
K4S561633F-ZE750
✅ 直接替换📋 参考替代料（不在目录中）
K4S561633F-XL750
✅ 直接替换📋 参考替代料（不在目录中）
K4S561633F-ZL75 最大额定值与电气特性
| 存储器类型 | Synchronous DRAM (Mobile SDRAM) |
| Density | 256 Mbit (268,435,456 bits) |
| 存储组织 | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) |
| Operating Frequency (max) | 133 MHz |
| Clock Access Time | 5.4 ns |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) |
| Supply Voltage (VDD) | 3.3 V |
| I/O Standard | LVCMOS-compatible |
| Number of Banks | 4 |
| Burst Length | 1, 2, 4, 8, Full Page |
| Burst Type | Sequential or Interleave |
| CAS 延迟 | Programmable, 2 or 3 |
| 封装 | 54-ball FBGA (54-BOC) / TFBGA |
| 安装类型 | Surface Mount |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) |
K4S561633F-ZL75 引脚配置
| 引脚 A1 | VDD — Power supply (3.3V) |
| 引脚 A2 | DQ0 — Data I/O, bit 0 |
| 引脚 A3 | DQ1 — Data I/O, bit 1 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | VSS — Ground |
| 引脚 A9 | DQ15 — Data I/O, bit 15 |
| 引脚 B1 | DQ2 — Data I/O, bit 2 |
| 引脚 B2 | DQ3 — Data I/O, bit 3 |
| 引脚 B7 | DQ14 — Data I/O, bit 14 |
| 引脚 B8 | DQ13 — Data I/O, bit 13 |
| 引脚 B9 | VSSQ — I/O ground |
| 引脚 C1 | VSSQ — I/O ground |
| 引脚 C2 | DQ4 — Data I/O, bit 4 |
| 引脚 C8 | DQ12 — Data I/O, bit 12 |
| 引脚 C9 | DQ11 — Data I/O, bit 11 |
| 引脚 D1 | DQ5 — Data I/O, bit 5 |
| 引脚 D2 | DQ6 — Data I/O, bit 6 |
| 引脚 D8 | DQ10 — Data I/O, bit 10 |
| 引脚 D9 | DQ9 — Data I/O, bit 9 |
| 引脚 E1 | DQ7 — Data I/O, bit 7 |
| 引脚 E2 | DQ8 — Data I/O, bit 8 |
| 引脚 E8 | CKE — Clock enable |
| 引脚 E9 | CLK — Clock input |
| 引脚 F1 | NC — Not connected (per datasheet) |
| 引脚 F2 | WE — Write enable (active low) |
| 引脚 F8 | CAS — Column address strobe (active low) |
| 引脚 F9 | RAS — Row address strobe (active low) |
| 引脚 G1 | CS — Chip select (active low) |
| 引脚 G2 | BA0 — Bank address 0 |
| 引脚 G8 | BA1 — Bank address 1 |
| 引脚 G9 | A11 — Address bit 11 |
| 引脚 H1 | A0 — Address bit 0 |
| 引脚 H2 | A1 — Address bit 1 |
| 引脚 H8 | A9 — Address bit 9 |
| 引脚 H9 | A10 — Address bit 10 |
| 引脚 J1 | A2 — Address bit 2 |
| 引脚 J2 | A3 — Address bit 3 |
| 引脚 J8 | A8 — Address bit 8 |
| 引脚 J9 | A7 — Address bit 7 |
| 引脚 K1 | A4 — Address bit 4 |
| 引脚 K2 | A5 — Address bit 5 |
| 引脚 K8 | A6 — Address bit 6 |
| 引脚 K9 | LDQM — Lower DQ mask enable |
| 引脚 L1 | UDQM — Upper DQ mask enable |
| 引脚 L2 | VSS — Ground |
| 引脚 L8 | VSS — Ground |
| 引脚 L9 | VSS — Ground |
典型应用
K4S561633F-ZL75 适用于 6 应用s: Mobile Handset Baseband Working Memory, PDA / Handheld Computing Memory Expansion, Portable Media Player DRAM Buffer, Set-Top Box (STB) Decoder Memory, Industrial HMI / Control Panel Memory, Networking / Router Memory Expansion.
Mobile Handset Baseband Working Memory
The K4S561633F-ZL75 is well-suited as the working DRAM for 3G/feature-phone baseband processors, where its 256Mbit (32MB) capacity and 16-bit bus width match the controller's external memory interface. Per Samsung's datasheet, the device's 133 MHz synchronous operation and CAS Latency 3 deliver the throughput needed for voice codec buffers, protocol stacks, and display refresh FIFOs without burdening the baseband DSP. The 54-ball FBGA (54-BOC) footprint keeps board height below 1.2 mm, satisfying the slim handset mechanical envelope, while the 3.3V LVCMOS interface simplifies power-tree design. Compared with older Fast-Page Mode DRAM of equivalent density, this Mobile SDRAM approximately doubles sustained bandwidth by overlapping precharge/activate of one bank with read/write on another, which is critical for video telephony and multimedia messaging workloads on entry-level smartphones.
推荐
PDA / Handheld Computing Memory Expansion
The K4S561633F-ZL75 is a frequent choice for PDA and handheld computing designs of its era, where 32MB of 16-bit-wide RAM is paired with a StrongARM / XScale-class application processor. The synchronous interface and programmable burst length (1/2/4/8/Full Page) let the controller pipeline cache-line fills efficiently, while four-bank operation prevents one transaction from blocking another. Samsung's 54-BOC FBGA package offers a much smaller board footprint than the older 54-TSOP-II 1Mx16 SDRAM, enabling slim PDA enclosures. The 3.3V single-supply design removes the need for a 5V-to-3.3V translator, lowering BOM cost. The ZL75 (133 MHz) speed grade is adequate for stylus-driven UI rendering and light multimedia playback typical of late-1990s/early-2000s PDAs.
推荐
Portable Media Player DRAM Buffer
In portable media players, the K4S561633F-ZL75 functions as a 32MB frame buffer that holds decoded audio/video frames between the DSP and the display controller. The 4-bank architecture reduces average page-miss latency, sustaining the bursty access pattern of video decoders, and the 133 MHz clock (CL3) is sufficient for QVGA-class video playback at 30 fps. The 54-ball FBGA keeps the PCB area under 8x8 mm, allowing the slim player form factor required for pocketable designs. Per the Samsung datasheet, the LVCMOS interface is tolerant of common portable battery-voltage rails, and the device's modest active current keeps it within the player's battery-budget. Compared with SDRAM of the same density in 54-TSOP-II, the BGA variant saves roughly 60% of board area.
推荐
Set-Top Box (STB) Decoder Memory
The K4S561633F-ZL75 is well-suited to early-generation set-top box designs as the main decoder memory, holding MPEG transport streams and decompressed frame buffers. The 16-bit data bus matches the typical STB MPEG decoder's external memory interface, and the 133 MHz / CL3 timing provides enough bandwidth for standard-definition MPEG-2 decoding without bus starvation. Samsung's 54-BOC FBGA package enables the compact motherboard layouts required for slim STB enclosures, and the 3.3V LVCMOS interface integrates directly with 3.3V-tolerant MPEG decoder ASICs of that era. The four-bank design lets the bus controller simultaneously fetch one stream while flushing the previous decode buffer, an essential pipelining capability for maintaining smooth video at 25/30 fps.
推荐
Industrial HMI / Control Panel Memory
In industrial HMI panels and control terminals, the K4S561633F-ZL75 provides 32MB of robust Mobile SDRAM for graphical user interfaces, recipe storage, and communication buffers. The 133 MHz synchronous interface (ZL75 grade) reliably drives TFT LCD controllers of 320x240 / 640x480 class, and the four-bank organization prevents UI redraw transactions from blocking Modbus/Ethernet comms. The 54-ball FBGA's small footprint and excellent mechanical robustness make it well-suited to industrial vibration/shock profiles, while the 3.3V single supply simplifies the power tree for 24V->3.3V DC-DC designs. Samsung fabricates the die on a mature CMOS process, contributing to long-term availability for industrial designs that need 10+ year lifecycle support.
推荐
Networking / Router Memory Expansion
The K4S561633F-ZL75 serves as a cost-effective memory expansion in legacy routers, VoIP gateways, and small-office networking equipment where 32MB is sufficient for packet buffers and routing tables. The 133 MHz synchronous interface keeps packet forwarding latency predictable, while the 16-bit bus width matches the typical 16-bit external memory interface on the network processor. Four-bank operation enables simultaneous DMA fill from the Ethernet MAC while the CPU performs lookups, a critical feature for sustained wire-speed forwarding on 100 Mbps ports. Samsung's 54-BOC FBGA keeps the routing escape area compact enough for the dense backplane of small routers. Compared with older Fast-Page Mode DRAM, this SDRAM roughly doubles packet throughput at the same clock rate.
推荐
推荐产品汇总
工程参考数据： K4S561633F-ZL75 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4S561633F-ZL750 | K4S561633F-ZL1H | K4S561633F-ZF75 | K4S561633F-ZE750 | K4S561633F-XL750 |
|---|---|---|---|---|---|---|
| Package | 54-FBGA (54-BOC) | 54-FBGA (54-BOC) - same | 54-FBGA (54-BOC) - same | 54-FBGA (54-BOC) - same | 54-FBGA (54-BOC) - same | 54-FBGA (54-BOC) - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 256 Mbit (4M x 16 x 4 banks) | 256 Mbit - same | 256 Mbit - same | 256 Mbit - same | 256 Mbit - same | 256 Mbit - same |
| Max Clock Frequency | 133 MHz (CL3, ZL75) | 166 MHz-class | 166 MHz | 133 MHz-class | 166 MHz-class | 166 MHz-class |
| CAS Latency | Programmable, 2 or 3 | Programmable, 2 or 3 | Programmable, 2 or 3 | Programmable, 2 or 3 | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| I/O Standard | LVCMOS | LVCMOS | LVCMOS | LVCMOS | LVCMOS | |
| RoHS / Pb-Free | Pb-Free (L75 suffix) | Pb-Free | Pb-Free | Pb-Free | Pb-Free (industrial temp grade) |
关键差异点
- Lowest cost speed grade in the K4S561633F family （对比 K4S561633F-ZL1H)
- Pb-Free / RoHS-compliant （对比 Older non-suffix K4S561633F parts)
- Same-die scalability （对比 K4S561633F-ZF75)
设计说明
Place 0.1 uF VDD/VSSQ decoupling capacitors as close as possible to the corresponding balls of the 54-FBGA. Use short, wide power traces; SDRAM is sensitive to VDD droop during bank activation bursts. Add a 10 uF bulk capacitor near the package. The 54-BOC ball land pattern (0.8 mm pitch typical) requires laser-cut or precision-etched PCB pads; verify your PCB vendor can meet the FBGA land pattern tolerances before fabrication.
Route DQ0..DQ15, address lines, and control signals (RAS, CAS, WE, CS, CKE, CLK, UDQM, LDQM) with matched trace lengths to keep skew within the datasheet's tDS/tDH window. The CLK signal should be routed on an inner layer with a continuous ground reference and via-stitching on both sides; avoid splitting the CLK reference plane. SDRAM controllers typically allow skews up to +/- 50 ps between byte lanes.
Do NOT use 54-TSOP-II footprints interchangeably with 54-FBGA (54-BOC) - the ball/pin maps are different. Follow the JEDEC SDRAM initialization sequence exactly: precharge-all, eight auto-refresh cycles, then Mode Register Set (MRS) load. After power-up, wait the specified tRP (precharge) interval before activating any bank, and follow the datasheet's CAS Latency programming values for the chosen clock rate.
The K4S561633F-ZL75's LVCMOS interface is single-ended 3.3V. For clock rates above 100 MHz, place a 33 ohm series resistor near the controller's CLK output to damp reflections on the transmission-line stub to the SDRAM input. Add 50 ohm termination to ground near the SDRAM CLK ball only if reflections are visible on a scope; otherwise rely on the SDRAM's on-die termination (none in this part - external damping only).
合规信息
Pb-Free / RoHS-compliant per -L75 suffix on Samsung part. AEC-Q100 not applicable (consumer mobile DRAM, not automotive-qualified).
