LM358DR vs NCV2904DR2G 对比

详细并排对比 LM358DR 出自 Texas Instruments 和 NCV2904DR2G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 LM358DR NCV2904DR2G
品牌 Texas Instruments onsemi
分类 Amplifier ICs Amplifier ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.05 $0.19
Amplifier Type General Purpose Operational Amplifier General Purpose Operational Amplifier
Number of Circuits 2 2
Gain Bandwidth Product 700 kHz —
Slew Rate 0.3 V/µs —
Supply Voltage (Single) 3 V to 32 V —
Supply Voltage (Dual) ±1.5 V to ±16 V —
Supply Current (per channel) 0.7 mA (typ) —
Input Offset Voltage 2 mV (typ), 7 mV (max) —
Common-Mode Input Range Extends to ground (V-) —
Output Current 20 mA (typ, short-circuit protected) —
Minimum Load Resistance 2 kΩ —
工作温度 0°C to +70°C —
封装 SOIC-8 (D) SOIC-8 (Case 751, D suffix)
安装类型 Surface Mount Surface Mount
Internal Compensation Yes (unity-gain stable) —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Supply Voltage (Single Supply) — 3.0 V to 26 V
Supply Voltage (Split Supply) — +/-1.5 V to +/-13 V
Common Mode Input Range — Extends to ground/VEE
Output — Short circuit protected
Input Stage — True differential input
Compensation — Internally compensated
ESD Protection — ESD clamps on inputs
Input Bias Current — Low input bias current
Power Drain — Low power drain
Qualification — NCV automotive grade
工作温度范围 — [DATA_NEEDED: operating temperature range]

数据手册与资源

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