M29W256GH70N3E vs M29W128GL70N3E 对比

详细并排对比 M29W256GH70N3E 出自 Micron Technology 和 M29W128GL70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W256GH70N3E M29W256GH70N3E - 256Mb Parallel NOR Flash 70ns | Micron

M29W256GH70N3E - 256Mb Parallel NOR Flash 70ns | Micron

M29W256GH70N3E ✓ 量产中
Micron Technology
M29W128GL70N3E M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E ✓ 量产中

规格对比

参数 M29W256GH70N3E M29W128GL70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.60 $8.65
存储器类型 NOR Flash (Parallel) NOR Flash (Parallel)
Density 256 Mbit (32 MB) 128 Mbit
存储组织 32M x 8 / 16M x 16 16M x8 / 8M x16
Access Time 70 ns 70 ns
电源电压 3 V 2.7 V to 3.6 V (3V/3.3V class)
接口 Parallel (asynchronous) Parallel
封装 56-TSOP 56-pin TSOP
工作温度 -40C to +125C -40C to +125C
安装类型 Surface Mount Surface Mount
数据总线宽度 8/16 bit (BYTE# selectable) —
Programming Type Command-set program/erase, block organized —
Common Flash Interface Yes (CFI) —
Product Longevity Program No (per family data) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Endurance [DATA_NEEDED: program/erase endurance cycles] —
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Boot Block Configuration — Bottom boot (GL suffix)
Packaging — Tray
Automotive Qualification — Automotive grade ordering code (N3E)
Bus Width Mode — Software-selectable x8/x16 (BYTE# pin)
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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