MT40A1G8AG-062E vs H5AN8G8NCJR-PBC 对比
详细并排对比 MT40A1G8AG-062E 出自 Micron Technology 和 H5AN8G8NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A1G8AG-062E | H5AN8G8NCJR-PBC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $2.40 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gb (1 GB) |
| 存储组织 | 1G x 8 | 1G x 8 (x8) |
| 接口 | Parallel | — |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | — |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封装 | 78-FBGA (7.5 x 11 mm) | 78-ball FBGA |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Lead-Free & Halogen-Free |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| 数据速率 | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| 特性 | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |