MT40A512M16HA-083E vs MT40A512M16JY-075E 对比

详细并排对比 MT40A512M16HA-083E 出自 Micron Technology 和 MT40A512M16JY-075E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16HA-083E MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E ✓ 量产中
Micron Technology
MT40A512M16JY-075E MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E ✓ 量产中

规格对比

参数 MT40A512M16HA-083E MT40A512M16JY-075E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $30.50
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 8Gbit —
Memory Organization 512M x 16 —
Data Interface Parallel DDR4, 16-bit —
数据速率 1.2 GHz data clock; DDR4-2400 class 2666 MT/s
VDD Supply 1.2 V plus or minus 60 mV —
VDDQ Supply 1.2 V plus or minus 60 mV —
VPP Supply 2.5 V, -125 mV to +250 mV —
I/O Interface 1.2V pseudo open-drain —
基准电压 On-die internal adjustable VREFDQ —
Refresh Cycle Count 8192 cycles —
Refresh Time, -40C to 85C 64 ms —
Refresh Time, >85C to 95C 32 ms —
Refresh Time, >95C 16 ms —
封装 96-ball FBGA, 9 x 14 mm 96-FBGA (8x14)
Ball Pitch 0.8 mm —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant Compliant
存储容量 — 8 Gbit
存储组织 — 512M x 16
Clock Frequency — 1.33 GHz
Supply Voltage (VDD/VDDQ) — 1.14V to 1.26V
VPP Voltage — 2.5V (-125mV, +250mV)
接口 — Parallel
工作温度范围 — 0°C to +95°C (TC)
Refresh Time — 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C
特性 — Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC
I/O Type — 1.2V pseudo open-drain

数据手册与资源

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