NDL46PFG-8KIT vs H5TC4G63AFR-PBA 对比

详细并排对比 NDL46PFG-8KIT 出自 Insignis Technology Corporation 和 H5TC4G63AFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Insignis Technology Corporation
NDL46PFG-8KIT NDL46PFG-8KIT - 4Gb DDR3L SDRAM 256Mx16 | Insignis

NDL46PFG-8KIT - 4Gb DDR3L SDRAM 256Mx16 | Insignis

NDL46PFG-8KIT ✓ 量产中
SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA ✓ 量产中

规格对比

参数 NDL46PFG-8KIT H5TC4G63AFR-PBA
品牌 Insignis Technology Corporation SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.60 $3.98
存储器类型 SDRAM - DDR3L DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
数据速率 1600 Mbps 1866 Mbps (PC3L-14900)
CAS 延迟 20 ns —
电源电压 1.35V (1.5V compatible) —
工作温度 95°C (max) —
封装 96-FBGA (7.5x13.5 mm) 96-ball FBGA
安装类型 Surface Mount —
接口 Parallel 16-bit I/O
Access Time 20 ns —
Burst Length 8 and 4 8 and 4 (with burst chop)
On-Die Termination Yes —
Refresh Mode Auto-refresh and self-refresh —
RoHS 状态 Compliant —
Density — 4Gb
存储组织 — 256M x 16
Supply Voltage (VDD/VDDQ) — 1.35V
Ball Pitch — 0.8mm
Number of Banks — 8
CAS Latency (CL) — 11, 12, 13
工作温度范围 — 0°C to +95°C (Tcase)
On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Partial Array Self-Refresh — Yes
RoHS — Compliant

数据手册与资源

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