NT5AD512M16A4-GZ vs H5AN8G6NDJR 对比
详细并排对比 NT5AD512M16A4-GZ 出自 Nanya Technology 和 H5AN8G6NDJR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5AD512M16A4-GZ | H5AN8G6NDJR |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.50 | $35.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | 512M x 16 |
| Density | 8Gb | 8 Gb |
| 电源电压 | 1.2V | 1.2 V |
| 最大时钟频率 | 1200 MHz | — |
| 数据总线宽度 | 16 bits | — |
| 封装 | TFBGA-96 | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | Multi Bank Page Burst |
| 工作温度范围 | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| 数据速率 | — | 3200 Mbps (DDR4-3200) |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延迟 | — | 22 cycles (at 3200 Mbps) |
| JESD-30 Code | — | R-PBGA-B96 |
| 特性 | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |