NT5AD512M16A4-GZ vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of NT5AD512M16A4-GZ by Nanya Technology and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16A4-GZ | H5AN8G6NDJR |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8Gb | 8 Gb |
| Supply Voltage | 1.2V | 1.2 V |
| Maximum Clock Frequency | 1200 MHz | — |
| Data Bus Width | 16 bits | — |
| Package | TFBGA-96 | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | Multi Bank Page Burst |
| Operating Temperature Range | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 cycles (at 3200 Mbps) |
| JESD-30 Code | — | R-PBGA-B96 |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |