NT5CC256M16DP-FLNA vs K4B4G1646E-BYMA 对比
详细并排对比 NT5CC256M16DP-FLNA 出自 Nanya Technology 和 K4B4G1646E-BYMA 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16DP-FLNA | K4B4G1646E-BYMA |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $20.00 | $14.32 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储组织 | 256M x 16 | 256M x 16 |
| Total Density | 4 Gb | — |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.28 V to 1.575 V) |
| 数据速率 | 1600 Mbps (PC3L-12800) | 1866 Mbps/pin |
| CAS 延迟 | 11, 12, 13 | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Number of Banks | 8 | — |
| 接口 | SSTL-15 | — |
| 封装 | BGA-96 (13x9 mm) | FBGA-96 |
| 工作温度 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh | Auto self-refresh, auto precharge | — |
| 特性 | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| 安装类型 | — | Surface Mount |
| 引脚数 | — | 96 |