NT5CC256M16DP-FLNA vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CC256M16DP-FLNA by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DP-FLNA
NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DP-FLNA β Active
Specification Comparison
| Parameter | NT5CC256M16DP-FLNA | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $20.00 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Density | 4 Gb | β |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.28 V to 1.575 V) |
| Data Rate | 1600 Mbps (PC3L-12800) | 1866 Mbps/pin |
| CAS Latency | 11, 12, 13 | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Number of Banks | 8 | β |
| Interface | SSTL-15 | β |
| Package | BGA-96 (13x9 mm) | FBGA-96 |
| Operating Temperature | -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) | 0Β°C to +95Β°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Refresh | Auto self-refresh, auto precharge | β |
| Features | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset | β |
| Density | β | 4 Gb |
| Clock Frequency | β | 933 MHz |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| Number of Pins | β | 96 |