NT6AN8T6WBJ1B1 vs H5AN8G6NCJR-VKC 对比
详细并排对比 NT6AN8T6WBJ1B1 出自 Nanya Technology 和 H5AN8G6NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT6AN8T6WBJ1B1 | H5AN8G6NCJR-VKC |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.75 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb (512M x 16) | — |
| 数据速率 | 3200 MT/s | 2666 Mbps |
| 电源电压 | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS 延迟 | 22 cycles | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (BL8), 4 (BC4) | 8 (BC4) |
| 封装 | 96-ball FBGA | FBGA-96 |
| 工作温度 | 0C to +95C (TC) | 0°C to +95°C |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS 状态 | Compliant | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS | — | Compliant |