NT6AN8T6WBJ1B1 vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT6AN8T6WBJ1B1
NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
NT6AN8T6WBJ1B1 β Active
Specification Comparison
| Parameter | NT6AN8T6WBJ1B1 | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.75 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (512M x 16) | β |
| Data Rate | 3200 MT/s | 2666 Mbps |
| Supply Voltage | 1.2 V | β |
| I/O Voltage (VDDQ) | 1.2 V | β |
| CAS Latency | 22 cycles | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (BL8), 4 (BC4) | 8 (BC4) |
| Package | 96-ball FBGA | FBGA-96 |
| Operating Temperature | 0C to +95C (TC) | 0Β°C to +95Β°C |
| Refresh | Auto-refresh, self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| Bank Groups | 4 groups of 4 banks | β |
| Row Address | 16 bits | β |
| Column Address | 10 bits | β |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| Operating Current (IDD2N) | β | 28 mA |
| Operating Current (IDD4R) | β | 45 mA |
| Row Address Bits | β | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | β | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS | β | Compliant |