NT6AN8T6WBJ1B1 vs K4A8G165WC-BCRC 对比
详细并排对比 NT6AN8T6WBJ1B1 出自 Nanya Technology 和 K4A8G165WC-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT6AN8T6WBJ1B1 | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.75 | $23.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb (512M x 16) | — |
| 数据速率 | 3200 MT/s | 2400 Mbps |
| 电源电压 | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS 延迟 | 22 cycles | Programmable (e.g., 16, 17, 18) |
| Burst Length | 8 (BL8), 4 (BC4) | 8 (BL8) |
| 封装 | 96-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| 工作温度 | 0C to +95C (TC) | 0°C to +95°C (case) |
| Refresh | Auto-refresh, self-refresh | Temperature-compensated self-refresh (TCSR) |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS 状态 | Compliant | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | — | 2.5 V |
| 接口 | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| RoHS | — | Compliant |
| 安装类型 | — | Surface Mount |