NT6AN8T6WBJ1B1 vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and K4A8G165WC-BCRC by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSpecification Comparison
| Parameter | NT6AN8T6WBJ1B1 | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electro-Mechanics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $19.69 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (512M x 16) | 8 Gbit |
| Data Rate | 3200 MT/s | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS Latency | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Package | 96-ball FBGA | 96-FBGA (TFBGA) |
| Operating Temperature | 0C to +95C (TC) | 0 C to +95 C |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS Status | Compliant | Compliant |
| Organization | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Mounting Type | — | Surface Mount |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |