NT6AN8T6WBJ1B1 vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT6AN8T6WBJ1B1
NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
NT6AN8T6WBJ1B1 β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | NT6AN8T6WBJ1B1 | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.75 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (512M x 16) | β |
| Data Rate | 3200 MT/s | 2400 Mbps |
| Supply Voltage | 1.2 V | β |
| I/O Voltage (VDDQ) | 1.2 V | β |
| CAS Latency | 22 cycles | Programmable (e.g., 16, 17, 18) |
| Burst Length | 8 (BL8), 4 (BC4) | 8 (BL8) |
| Package | 96-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| Operating Temperature | 0C to +95C (TC) | 0Β°C to +95Β°C (case) |
| Refresh | Auto-refresh, self-refresh | Temperature-compensated self-refresh (TCSR) |
| On-Die Termination | Yes (ODT) | β |
| Bank Groups | 4 groups of 4 banks | β |
| Row Address | 16 bits | β |
| Column Address | 10 bits | β |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | β | 2.5 V |
| Interface | β | 16-bit I/O |
| Banks | β | 16 (4 bank groups) |
| RoHS | β | Compliant |
| Mounting Type | β | Surface Mount |